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mw4ic001nr4 mw4ic001mr4 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifiers the mw4ic001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. it uses freescale?s newest high voltage (26 to 28 volts) ldmos ic technology. its wideband on chip design makes it usable from 800 mhz to 2170 mhz. the linearity performances cover all modulations for cellular applications: gsm edge, tdma, cdma and w - cdma. ? typical cw performance at 2170 mhz, 28 volts, i dq = 12 ma output power ? 900 mw pep power gain ? 13 db efficiency ? 38% ? high gain, high efficiency and high linearity ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? n suffix indicates lead - free terminations ? in tape and reel. r4 suffix = 100 units per 12 mm, 7 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 4.58 0.037 w w/ c storage temperature range t stg - 65 to +150 c operating junction temperature t j 150 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case @ 85 c r jc 27.3 c/w table 3. esd protection characteristics test conditions class human body model 0 (minimum) machine model m1 (minimum) charge device model c2 (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c note - caution - mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. mw4ic001mr4 rev. 3, 1/2005 freescale semiconductor technical data 800 - 2170 mhz, 900 mw, 28 v w - cdma rf ldmos wideband integrated power amplifiers case 466 - 03, style 1 pld - 1.5 plastic mw4ic001nr4 mw4ic001mr4 ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor mw4ic001nr4 mw4ic001mr4 table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 10 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 v, i d = 50 a) v gs(th) 2 3 5 vdc gate quiescent voltage (v ds = 28 v, i d = 10 ma) v gs(q) 2 3.7 5 vdc drain - source on - voltage (v gs = 10 v, i d = 0.05 a) v ds(on) ? 0.48 0.9 vdc forward transconductance (v ds = 10 v, i d = 0.1 a) g fs ? 0.05 ? s dynamic characteristics output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 45 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.62 ? pf functional tests (in freescale test fixture, 50 ohm system) two - tone common source amplifier power gain (v dd = 28 vdc, p out = 0.9 w pep, i dq = 12 ma, f = 2170 mhz, tone spacing = 100 khz) g ps ? 13 ? db two - tone drain efficiency (v dd = 28 vdc, p out = 0.9 w pep, i dq = 12 ma, f = 2170 mhz, tone spacing = 100 khz) d ? 29 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 0.9 w pep, i dq = 12 ma, f = 2170 mhz, tone spacing = 100 khz) imd ? -28 ? dbc input return loss (v dd = 28 vdc, p out = 0.9 w pep, i dq = 12 ma, f = 2170 mhz, tone spacing = 100 khz) irl ? -18 ? db output power, 1 db compression point, cw (v dd = 28 vdc, i dq = 12 ma, f = 2170 mhz) p1db ? 0.85 ? w common - source amplifier power gain (v dd = 28 vdc, p out = 0.9 w cw, i dq = 12 ma, f = 2170 mhz) g ps 12 13 ? db drain efficiency (v dd = 28 vdc, p out = 0.9 w cw, i dq = 12 ma, f = 2170 mhz) d 35 38 ? % input return loss (v dd = 28 vdc, p out = 0.9 w cw, i dq = 12 ma, f = 2170 mhz) irl -10 -16 ? db
mw4ic001nr4 mw4ic001mr4 3 rf device data freescale semiconductor r2 figure 1. mw4ic001nr4(mr4) 900 mhz test circuit schematic z9 0.062 x 0.044 to 0.615 taper z10 0.082 x 0.615 microstrip z11 0.075 x 0.044 microstrip z12 0.625 x 0.044 microstrip z13 1.375 x 0.044 microstrip pcb rogers ro4350, 0.020 , r = 3.5 z1 1.331 x 0.044 microstrip z2 0.126 x 0.076 microstrip z3 0.065 x 0.175 microstrip z4 0.065 x 0.195 microstrip z5 0.680 x 0.145 microstrip z6, z7 1.915 x 0.055 microstrip z8 0.120 x 0.141 microstrip rf input z1 v gg z2 z6 c4 z3 rf output c5 dut v dd z9 z11 z13 z7 z5 c2 r1 c7 z8 z10 c8 + z12 c1 c9 l2 l1 c10 c3 c6 c11 c12 c13 z4 table 6. mw4ic001nr4(mr4) 900 mhz test circuit component designations and values part description part number manufacturer c1, c6 0.1 f, 100 v chip capacitors c1210c104k5ractr kemet c2, c3, c5, c7 43 pf, 500 v chip capacitors 100b430jp500x atc c4 12 pf, 500 v chip capacitor 100b120jp500x atc c8 22 f, 35 v tantalum chip capacitor t491x226k035as kemet c9 4.7 pf, 500 v chip capacitor 100B4R7CP500X atc c10, c11 0.6 - 4.5 pf, 500 v variable capacitors 27271sl johanson c12 2.7 pf, 500 v chip capacitor 100b2r7cp500x atc c13 3.3 pf, 500 v chip capacitor 100b3r3cp500x atc l1 5.6 nh chip inductor 0805 series avx l2 10 nh chip inductor 1008 series atc r1 100 chip resistor crcw12061001f100 dale r2 20 chip resistor crcw120620r0f100 dale
4 rf device data freescale semiconductor mw4ic001nr4 mw4ic001mr4 c8 figure 2. mw4ic001nr4(mr4) 900 mhz test circuit component layout v gg v dd 900 mhz mw4ic001mr4 c6 c1 c7 c2 r1 c10 c13 rev 2 c3 c9 l1 c4 r2 l2 c12 c11 c5 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
mw4ic001nr4 mw4ic001mr4 5 rf device data freescale semiconductor typical characteristics - 900 mhz 905 50 ?35 ?15 f1, frequency (mhz) figure 3. two-tone performance versus frequency intermodulation distortion (dbc) imd, input return loss (db) irl, v ds = 28 vdc p out = 0.9 w (pep) i dq = 14 ma two ?tone measurement 100 khz tone spacing d irl g ps im3 ?17 ?19 ?21 ?23 ?25 ?27 ?29 ?31 ?33 46 42 38 34 30 26 22 18 14 10 900 895 890 885 880 875 870 865 860 855 60 55 50 45 40 35 30 25 20 15 15 0 p1db p out , output power (watts) figure 4. cw performance versus output power g ps , power gain (db) v ds = 28 vdc i dq = 14 ma f = 880 mhz g ps 14 13 12 11 10 9 8 7 6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 ?25 ?30 ?35 ?40 ?45 ?50 ?55 1 0.1 0.01 i dq = 8 ma 12 ma p out , output power (watts) pep figure 5. intermodulation distortion versus output power intermodulation distortion (dbc) imd, 10 ma 16 ma 14 ma 18 ma 10 ?25 3rd order p out , output power (watts) pep figure 6. intermodulation distortion products versus output power intermodulation distortion (dbc) imd, v ds = 28 vdc i dq = 14 ma f1 = 880 mhz f2 = 880.1 mhz 5th order 7th order ?30 ?35 ?40 ?45 ?50 ?55 ?60 ?65 ?70 1 0.1 0.01 10 ?25 10 mhz p out , output power (watts) pep figure 7. third order intermodulation distortion versus output power intermodulation distortion (dbc) imd, v ds = 28 vdc i dq = 14 ma f1 = 880 mhz, f2 = f1 + tone spacing two ?tone measurement ?30 ?35 ?40 ?45 ?50 1 0.1 0.01 1 mhz tone spacing = 100 khz two ?tone measurement 100 khz tone spacing v ds = 28 vdc f1 = 880 mhz f2 = 880.1 mhz two ?tone measurement 100 khz tone spacing d d , drain efficiency (%), g ps , power gain (db) d , drain efficiency (%)
6 rf device data freescale semiconductor mw4ic001nr4 mw4ic001mr4 c7 z6 z3 figure 8. mw4ic001nr4(mr4) 1990 mhz test circuit schematic z9 0.067 x 0.264 microstrip z10 0.457 x 0.492 microstrip z11 0.719 x 0.022 microstrip z12 1.149 x 0.022 microstrip z13 0.677 x 0.434 microstrip z14 0.095 x 0.264 microstrip z15 0.772 x 0.044 microstrip pcb rogers ro4350, 0.020 , r = 3.5 z1 1.018 x 0.044 microstrip z2 0.495 x 0.296 microstrip z3 0.893 x 0.500 microstrip z4 1.340 x 0.022 microstrip z5 0.912 x 0.022 microstrip z6 0.241 x 0.500 microstrip z7 0.076 x 0.150 microstrip z8 0.294 x 0.150 microstrip rf input z1 v gg z2 z4 z5 c3 rf output c5 dut v dd z10 z13 z15 z11 z7 c1 + c2 r1 c4 z12 z8 z9 c6 + z14 table 7. mw4ic001nr4(mr4) 1990 mhz test circuit component designations and values part description part number manufacturer c1, c6 22 f, 35 v tantalum capacitors t491x226k035as kemet c2, c4 10 pf, 500 v chip capacitors 100b100jca500x atc c3, c5 10 pf, 500 v chip capacitor 600s100jw atc c7 0.6 - 4.5 pf, 500 v variable capacitor 27271sl johanson r1 1 k chip resistor crcw12061021f100 dale figure 9. mw4ic001nr4(mr4) 1990 mhz test circuit component layout c3 c4 c2 c6 c5 c7 r1 v gg mw4ic001mr4 rev 3 v dd c1 1990 mhz freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
mw4ic001nr4 mw4ic001mr4 7 rf device data freescale semiconductor typical characteristics - 1990 mhz d 1990 0 40 1930 ?35 ?11 irl g ps imd f1, frequency (mhz) figure 10. two-tone performance versus frequency input return loss (db) irl, intermodulation distortion (dbc) imd, 35 30 25 20 15 10 5 1940 1950 1960 1970 1980 ?14 ?17 ?20 ?23 ?26 ?29 ?32 1.3 14.4 0.1 56 g ps p out , output power (watts) figure 11. cw performance versus output power g ps , power gain (db) v dd = 28 vdc i dq = 12 ma f = 1990 mhz 14.0 13.6 13.2 12.8 12.4 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 48 40 32 24 16 1 ?60 ?30 0.01 i dq = 20 ma 16 ma p out , output power (watts) pep figure 12. intermodulation distortion versus output power intermodulation distortion (dbc) imd, v dd = 28 vdc f1 = 1990 mhz, f2 = 1990.1 mhz two ?tone measurement 100 khz tone spacing 12 ma 9.6 ma ?35 ?40 ?45 ?50 ?55 0.1 1 ?30 0.01 3rd order output power (watts) pep figure 13. intermodulation distortion products versus output power intermodulation distortion (dbc) imd, 7th order 5th order v dd = 28 vdc i dq = 12 ma, f1 = 1990 mhz, f2 = 1990.1 mhz two?tone measurement, 100 khz t one spacing ?35 ?40 ?45 ?50 ?55 ?60 ?65 ?70 ?75 0.1 1 ?30 0.01 10 mhz p out , output power (watts) pep figure 14. third order intermodulation distortion versus output power third order intermodulation (dbc) imd, v dd = 28 vdc i dq = 12 ma f1 = 1990 mhz f2 = f1 + tone spacing two ?tone measurement 100 khz ?35 ?40 ?45 ?50 ?55 ?60 0.1 1 mhz p1db v dd = 28 vdc, p out = 0.9 w (pep), i dq = 12 ma two?tone measurement, 100 khz tone spacing d d , drain efficiency (%), g ps , power gain (db) d , drain efficiency (%)
8 rf device data freescale semiconductor mw4ic001nr4 mw4ic001mr4 c7 z6 z3 figure 15. mw4ic001nr4(mr4) 2170 mhz test circuit schematic z9 0.106 x 0.344 microstrip z10 0.783 x 0.500 microstrip z11 0.847 x 0.022 microstrip z12 1.055 x 0.022 microstrip z13 0.291 x 0.387 microstrip z14 0.050 x 0.287 microstrip z15 0.950 x 0.044 microstrip pcb rogers ro4350, 0.020 , r = 3.5 z1 1.267 x 0.044 microstrip z2 0.058 x 0.044 microstrip z3 0.758 x 0.256 microstrip z4 1.073 x 0.022 microstrip z5 1.361 x 0.022 microstrip z6 0.205 x 0.332 microstrip z7 0.109 x 0.150 microstrip z8 0.210 x 0.150 microstrip rf input z1 v gg z2 z4 z5 c3 rf output c5 dut v dd z10 z13 z15 z11 z7 c1 + c2 r1 c4 z12 z8 z9 c6 + z14 table 8. mw4ic001nr4(mr4) 2170 mhz test circuit component designations and values part description part number manufacturer c1, c6 22 f, 35 v tantalum capacitors t491x226k035as kemet c2, c4 10 pf, 500 v chip capacitors 100b100jca500x atc c3, c5 10 pf, 500 v chip capacitor 600s100jw atc c7 0.6 - 4.5 pf, 500 v variable capacitor 27271sl johanson r1 1 k chip resistor crcw12061021f100 dale figure 16. mw4ic001nr4(mr4) 2170 mhz test circuit component layout c3 c4 c2 c6 c5 c7 r1 v gg 2170 mhz mw4ic001mr4 rev 3 v dd c1 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
mw4ic001nr4 mw4ic001mr4 9 rf device data freescale semiconductor typical characteristics - 2170 mhz 2170 32 irl g ps imd f, frequency (mhz) figure 17. two-tone performance versus frequency v dd = 28 vdc p out = 0.9 w (pep) i dq = 12 ma two?tone measurement, 100 khz tone spacing 27 22 17 12 2160 2150 2140 2130 2120 2110 ?28 ?13 ?18 ?23 ?33 d 0.1 60 g ps p out , output power (watts) pep figure 18. cw performance versus output power g ps , power gain (db) v dd = 28 vdc i dq = 12ma f = 2170 mhz 50 40 30 20 10 0 13.8 13.4 13.0 12.6 12.2 11.8 11.4 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 1.1 1.2 1.3 1.4 1.5 0.9 1 ?20 0.01 p out , output power (watts) pep figure 19. intermodulation distortion versus output power intermodulation distortion (dbc) imd, ?25 ?30 ?35 ?40 ?45 ?50 0.1 i dq = 7.2 ma 12 ma v dd = 28 vdc f1 = 2170 mhz, f2 = 2170.1 mhz two?tone measurement 100 khz tone spacing 20 ma 9.6 ma 16 ma ?20 p out , output power (watts) pep figure 20. intermodulation distortion products versus output power intermodulation distortion (dbc) imd, v dd = 28 vdc, i dq = 12 ma, f1 = 2170 mhz, f2 = 2170.1 mhz two?tone measurement, 100 khz tone spacing 5th order 3rd order 7th order ?25 ?35 ?30 ?45 ?40 ?50 ?55 ?60 ?65 ?70 0.01 0.1 1 1 ?20 0.01 1 mhz p out , output power (watts) pep figure 21. third order intermodulation distortion versus output power 100 khz 10 mhz v dd = 28 vdc i dq = 12 ma f1 = 2170 mhz f2 = f1 + tone spacing two ?tone measurement ?25 ?30 ?35 ?40 ?45 0.1 imd,third order intermodulation (dbc) input return loss (db) irl, intermodulation distortion (dbc) imd, p1db d , drain efficiency (%) d d , drain efficiency (%), g ps , power gain (db)
10 rf device data freescale semiconductor mw4ic001nr4 mw4ic001mr4 figure 22. series equivalent source and load impedance f mhz z source ? z load ? 860 865 870 27.853 + j5.908 29.458 + j6.285 28.617 + j6.078 15.492 + j63.669 15.592 + j68.687 15.788 + j69.799 v dd = 28 v, i dq = 14 ma, p out = 0.9 w pep 875 880 885 30.306 + j6.422 32.194 + j6.660 31.223 + j6.567 15.835 + j70.863 15.975 + j71.920 16.094 + j73.091 890 33.228 + j6.656 16.286 + j74.159 890 895 34.293 + j6.624 16.344 + j75.236 900 35.424 + j6.508 16.628 + j76.283 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f =860 mhz z source f = 900 mhz z load f = 900 mhz f = 860 mhz z o = 50 ?
mw4ic001nr4 mw4ic001mr4 11 rf device data freescale semiconductor figure 23. series equivalent source and load impedance f mhz z source ? z load ? 1920 1930 1940 4.238 + j15.142 4.490 + j15.466 4.322 + j15.362 7.764 + j28.829 8.056 + j29.352 8.436 + j29.727 v dd = 28 v, i dq = 12 ma, p out = 0.9 w pep 1950 1960 1970 4.605 + j15.711 4.905 + j16.050 4.752 + j15.904 8.809 + j30.249 9.183 + j30.763 9.598 + j31.213 1980 5.071 + j16.236 10.030 + j31.690 1990 5.262 + j16.446 10.546 + j32.237 2000 5.487 + j16.632 11.054 + j32.726 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source f = 1920 mhz z o = 50 ? f = 2000 mhz f = 1920 mhz f = 2000 mhz z load f mhz z source ? z load ? 2100 2110 2120 2.667 + j12.903 2.664 + j13.224 2.671 + j13.070 5.892 + j26.374 6.092 + j26.739 6.281 + j27.094 v dd = 28 v, i dq = 12 ma, p out = 0.9 w pep 2130 2140 2150 2.694 + j13.431 2.702 + j13.700 2.703 + j13.511 6.540 + j27.510 6.748 + j27.795 6.996 + j28.182 2160 2.745 + j13.952 7.300 + j28.678 2170 2.754 + j14.026 7.562 + j28.987 2180 2.784 + j14.206 7.862 + j29.411 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network z source f = 2180 mhz f = 2100 mhz f = 2100 mhz z load f = 2180 mhz z o = 50 ? z source z load input matching network device under test output matching network
12 rf device data freescale semiconductor mw4ic001nr4 mw4ic001mr4 notes
mw4ic001nr4 mw4ic001mr4 13 rf device data freescale semiconductor notes
14 rf device data freescale semiconductor mw4ic001nr4 mw4ic001mr4 notes
mw4ic001nr4 mw4ic001mr4 15 rf device data freescale semiconductor package dimensions case 466 - 03 issue c pld - 1.5 plastic notes: 1. interpret dimensions and tolerances per asme y14.5m, 1984. 2. controlling dimension: inch 3. resin bleed/flash allowable in zone v, w, and x. dim min max min max millimeters inches a 0.255 0.265 6.48 6.73 b 0.225 0.235 5.72 5.97 c 0.065 0.072 1.65 1.83 d 0.130 0.150 3.30 3.81 e 0.021 0.026 0.53 0.66 f 0.026 0.044 0.66 1.12 g 0.050 0.070 1.27 1.78 h 0.045 0.063 1.14 1.60 k 0.273 0.285 6.93 7.24 l 0.245 0.255 6.22 6.48 n 0.230 0.240 5.84 6.10 p 0.000 0.008 0.00 0.20 q 0.055 0.063 1.40 1.60 r 0.200 0.210 5.08 5.33 s 0.006 0.012 0.15 0.31 u 0.006 0.012 0.15 0.31 zone v 0.000 0.021 0.00 0.53 zone w 0.000 0.010 0.00 0.25 zone x 0.000 0.010 0.00 0.25 style 1: pin 1. drain 2. gate 3. source 4. source j 0.160 0.180 4.06 4.57 a b d f l r 3 4 2 1 k n zone v zone w zone x g s h u 10 draft p c e 0.35 (0.89) x 45 5 yy q view y - y 4 2 1 3
16 rf device data freescale semiconductor mw4ic001nr4 mw4ic001mr4 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com mw4ic001mr4 rev. 3, 1/2005 document number:

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